Electromagnetic waves with frequencies between microwave and infrared light, also known as terahertz radiation, are leveraged ...

Abstract: The general diode equation or the nonideal diode equation is the foundation of circuit models of active devices for the past several decades. Apart from the effect of a p-n junction, this ...

1 School of Materials Science and Engineering, Taizhou University, Taizhou, China 2 Department of Mechanical Engineering, University of Delaware, Newark, DE, United States The semiconductor industry ...

A recent study published in Light: Science & Applications introduced a new method for determining the PN junction depth in a silicon wafer. This technique works at nanometer-scale resolution and is ...

Because of their compact size, higher efficiency, and superior performance in high-power applications, SiC MOSFETs are now replacing Si devices in switching applications. SiC devices enable faster ...

Understanding the operating principles of a Gunn diode. Waveguide techniques for Gunn oscillator design. Key starting parameters for dual-tuned microwave Gunn oscillators. Despite being an older, ...

Advanced Photovoltaics Research Center, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea Graduate School of Energy and Environment (KU-KIST GREEN SCHOOL), Korea ...

A detailed analysis of the I-V characteristics of a PN junction diode (1N4148) under different temperatures, utilizing Excel for graphical analysis and parameter extraction. This study was conducted ...

Aluminum Nitride (AlN) stands out as a potential contender for other materials, thanks to recent technological advances at Nagoya University reported at the most recent IEDM Event. It is well known ...

In the previous tutorial, we discussed the physical mechanism that determines the increasing trend of the reverse saturation current of a pn junction, as a function of temperature. In this article, we ...