The first results have been reported on a collaboration between ETH Zürich and Australia's Nuclear Science and Technology Organisation (ANSTO), looking at the impact of radiation on SiC devices for ...

Rohm has unveiled a 100 V power metal-oxide-semiconductor field-effect transistor (MOSFET) for hot-swap circuits in 48 V ...

The low figure of merit and enhanced packaging of Toshiba’s new MOSFETs contribute to higher efficiency in high-voltage power system designs.

Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today introduced three ...

Rohm has released a 100V power MOSFET – RY7P250BM – optimised for hot-swap circuits in 48V power systems used in AI servers ...

To enhance the electrical performance and reliability of silicon carbide (SiC) power modules, the study explores Cu-clip as a promising alternative to traditional Al-wire interconnections. SiC power ...

This paper presents a dual-mode Doherty long-term evolution (LTE) power amplifier (PA) for efficiency enhancement at power back-off. The amplifier utilizes transformer-based Doherty operation to ...

The team used a modified commercial cryogenic hybrid LNA based on InP HEMTs characterised to demonstrate the feasibility of ...

Chalmers engineers built a pulse-driven qubit amplifier that’s ten times more efficient, stays cool, and safeguards quantum ...

Alpha and Omega Semiconductor Limited introduced its AONK40202 25V MOSFET in state-of-the-art DFN3.3×3.3 Source-Down ...

Alpha and Omega Semiconductor has introduced the AONK40202 25V MOSFET in state-of-the-art DFN3.3x3.3 Source-Down packaging technology. 25 V MOSFET targets AI server power demands Credit: Alpha and ...