The first results have been reported on a collaboration between ETH Zürich and Australia's Nuclear Science and Technology Organisation (ANSTO), looking at the impact of radiation on SiC devices for ...

With the growing application of silicon carbide (SiC) MOSFETs, the instability issues of the threshold voltage have attracted significant attention. However, there is limited research on the recovery ...

Rohm has unveiled a 100 V power metal-oxide-semiconductor field-effect transistor (MOSFET) for hot-swap circuits in 48 V ...

Renesas Electronics has introduced three new 650V GaN FETs for AI data centres and server power supply systems including the ...

The low figure of merit and enhanced packaging of Toshiba’s new MOSFETs contribute to higher efficiency in high-voltage power system designs.

Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today introduced three ...

Rohm has released a 100V power MOSFET – RY7P250BM – optimised for hot-swap circuits in 48V power systems used in AI servers ...

The RY7P250BM has also been certified as a recommended component by a leading global cloud platform provider and is expected to see broad adoption in next-generation AI servers. Its wide SOA and low ...

To enhance the electrical performance and reliability of silicon carbide (SiC) power modules, the study explores Cu-clip as a promising alternative to traditional Al-wire interconnections. SiC power ...

The IGTO (t) is the first new high-voltage silicon power switch since the IGBT changed the game nearly 50 years ago. Pakal created the IGTO (t) to address the multibillion-dollar market gap between ...