With the growing application of silicon carbide (SiC) MOSFETs, the instability issues of the threshold voltage have attracted significant attention. However, there is limited research on the recovery ...

Infineon has announced that its scalable GaN manufacturing on 300mm wafers is on track, with first samples available for ...

Navitas' GaN IC portfolio is expected to use Powerchip’s 200mm in Fab 8B, located in Zhunan Science Park, Taiwan. The fab has ...

Rohm has unveiled a 100 V power metal-oxide-semiconductor field-effect transistor (MOSFET) for hot-swap circuits in 48 V ...