ST’s VIPER11B voltage converter integrates an 800-V avalanche-rugged MOSFET to power smart home and lighting applications up ...

The IGTO (t) is the first new high-voltage silicon power switch since the IGBT changed the game nearly 50 years ago. Pakal created the IGTO (t) to address the multibillion-dollar market gap between ...

Quantum computers just got cooler—literally—thanks to a smart amplifier that slashes heat without sacrificing speed.

Rohm has unveiled a 100 V power metal-oxide-semiconductor field-effect transistor (MOSFET) for hot-swap circuits in 48 V ...

The low figure of merit and enhanced packaging of Toshiba’s new MOSFETs contribute to higher efficiency in high-voltage power system designs.

The RY7P250BM has also been certified as a recommended component by a leading global cloud platform provider and is expected to see broad adoption in next-generation AI servers. Its wide SOA and low ...

The first results have been reported on a collaboration between ETH Zürich and Australia's Nuclear Science and Technology Organisation (ANSTO), looking at the impact of radiation on SiC devices for ...

Renesas Electronics has introduced three new 650V GaN FETs for AI data centres and server power supply systems including the ...

Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today introduced three ...

Skynopy, the French end-to-end ground station service startup, raises €15m in a funding round with backers including Alven ...

Rohm has released a 100V power MOSFET – RY7P250BM – optimised for hot-swap circuits in 48V power systems used in AI servers ...

In this study, we have realized a monolithic silicon carbide (SiC) power integrated circuit (IC) integrating a 1.2 kV-class trench gate vertical metal-oxide-semiconductor field-effect transistor ...