The first results have been reported on a collaboration between ETH Zürich and Australia's Nuclear Science and Technology Organisation (ANSTO), looking at the impact of radiation on SiC devices for ...

Infineon has announced that its scalable GaN manufacturing on 300mm wafers is on track, with first samples available for ...

With the growing application of silicon carbide (SiC) MOSFETs, the instability issues of the threshold voltage have attracted significant attention. However, there is limited research on the recovery ...