TI unveils the first 48-V integrated hot-swap eFuse and a new family of integrated GaN power stages in TOLL packaging.

Canadian Bitcoin miner Bitfarms on Monday announced it had bought U.S.-based Stronghold Digital Mining with the deal valued ...

In addition, Vishay will provide a portfolio roadmap for 650 V to 1,700 V SiC MOSFETs with on-resistances ranging from 10 mΩ to 560 Ω. Vishay’s SiC platform is based on a proprietary MOSFET technology ...

The next evolution of stablecoins represents a trillion-dollar opportunity, argues Coinshift CEO Tarun Gupta. (Sponsored post ...

Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...

Toshiba's new gate driver IC for brushed DC motors supports downsizing, low power use, and higher reliability in automotive ...

Vishay Intertechnology has announced that its newly released 1200V MaxSiC SiC MOSFETs will take centre stage at the Applied Power Electronics Conference and Exposition (APEC) 2025, March 16-20 in ...

In other words, the Spark 2 is the latest example of the "software-ization" of music. Forget the old image of a studio filled ...

An amp emulation pedal can transform your acoustic amp into an electric combo, giving you the best of both worlds ...

ChatGPT explains the active pixel sensor this way: ...

GaN innovator Finwave Semiconductor has signed a global agreement with RF and microwave device distributor RFMW, bringing its ...

The big change though is that the SRM-400S is an all FET design with dual FETs on the first stage and FETs also on the output ...