Power device makers roll out their latest advances at APEC 2025, targeting a range of applications from AI data centers to ...

Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...

The Compound Semiconductor Materials Market is on a high-growth trajectory, with projections indicating an increase from USD ...

The company also provides silicon MOSFETs, SiC MOSFETs, IGBTs, thyristors, rectifiers, and power modules and bipolar transistors; general purpose and secure microcontrollers, NFC solutions ...

(Image: Azal Alothmani, Lund University) When working as an amplifier, a transistor transforms ... TFETs have the potential to greatly reduce the power consumption of electronic devices compared to ...

One of Versa Drive's most remarkable achievements is the creation of Superfan, India’s first super energy-efficient ceiling ...

NoMIS Power claims a breakthrough in the short-circuit withstand time of SiC MOSFETs; opens up new opportunities in high ...

When it comes to valve amplifiers, power outputs of around 30W to 50W tend to be the norm. In some instances, this figure might rise to around the 100W mark. But Audio Research’s new Reference 330M ...

Power Integrations’s 5th-generation switcher ICs provide up to 175-W output and achieve 92% efficiency in classic flyback ...

Electric current generated when high dv/dt voltage is applied to capacitance between the drain and gate of a MOSFET or between the collector and gate of an IGBT. [2] The lower arm is the part that ...