The low figure of merit and enhanced packaging of Toshiba’s new MOSFETs contribute to higher efficiency in high-voltage power system designs.

Rohm has unveiled a 100 V power metal-oxide-semiconductor field-effect transistor (MOSFET) for hot-swap circuits in 48 V ...

The first results have been reported on a collaboration between ETH Zürich and Australia's Nuclear Science and Technology Organisation (ANSTO), looking at the impact of radiation on SiC devices for ...

Infineon has announced that its scalable GaN manufacturing on 300mm wafers is on track, with first samples available for ...

The RY7P250BM has also been certified as a recommended component by a leading global cloud platform provider and is expected to see broad adoption in next-generation AI servers. Its wide SOA and low ...

An analysis of four different topologies to meet ATE SMU requirements with a final, the two-stage approach as the most ...

According to the brand, the new compact amp pushes the boundaries of what was previously thought possible with Class D ...

Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today introduced three ...

Skynopy, the French end-to-end ground station service startup, raises €15m in a funding round with backers including Alven ...

The semiconductor manufacturing equipment industry is expected to have a CAGR of 7% 2024-28 to reach 11.1 million wpm in 2028 ...

Rohm has released a 100V power MOSFET – RY7P250BM – optimised for hot-swap circuits in 48V power systems used in AI servers ...