The input of a high-performance op-amp will almost certainly be a FET, for example. This half-bridge power MOSFET driver circuit uses a specialist gate driver IC with a pair of Schmidt buffers to ...
TI unveils the first 48-V integrated hot-swap eFuse and a new family of integrated GaN power stages in TOLL packaging.
The latest additions to Nexperia’s e-mode GaN FET portfolio include new low voltage 40 V bi-directional devices (RDSon<12 mΩ) to support overvoltage protection (OVP), load switching, and low-voltage ...
The latest additions to Nexperia’s e-mode GaN FET portfolio include new low voltage 40 V bi-directional devices (RDSon<12 mΩ) to support overvoltage protection (OVP), load switching, and low-voltage ...
To drive a MOSFET requires more than merely a logic level output, there’s a requirement to charge the device’s gate which necessitates a suitable buffer amplifier. A variety of different ...
A type of metal oxide semiconductor field-effect transistor (MOSFET) used to switch large amounts of current. Power MOSFETs use a vertical structure with source and drain terminals at opposite ...
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