TI unveils the first 48-V integrated hot-swap eFuse and a new family of integrated GaN power stages in TOLL packaging.

In other words, the Spark 2 is the latest example of the "software-ization" of music. Forget the old image of a studio filled ...

Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...

The big change though is that the SRM-400S is an all FET design with dual FETs on the first stage and FETs also on the output ...

Frontgrade’s 28V GaN DC-DC Converter leverages advanced GaN FET technology to provide spacecraft ... mission processing subsystems, high power amplifiers, custom ASICs, motion control systems ...

Frontgrade’s 28V GaN DC-DC Converter leverages advanced GaN FET technology to provide spacecraft ... mission processing subsystems, high power amplifiers, custom ASICs, motion control systems ...

It's the power of transistors that have ... A schematic overview of a planar n-type MOSFET, with doped source and drain regions. (Image: Azal Alothmani, Lund University) When working as an amplifier, ...

ensuring better biasing and making the circuit less sensitive to power supply variations. Additionally, using a MOSFET instead of a resistor saves space in IC design and enhances common-mode signal ...

Because of its properties, twisted bilayer graphene promises applications that include RF amplifiers, optical sensors ... In addition, it allows the creation of smaller FET transistors, and it is ...

Power Supply (VDD): Provides the necessary voltage for the amplifier to function ... By dc analysis we get operating point as (1.25V, 27.17µA) and mosfet is in saturation region. I observed that when ...