TI unveils the first 48-V integrated hot-swap eFuse and a new family of integrated GaN power stages in TOLL packaging.

Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...

It's the power of transistors that have ... A schematic overview of a planar n-type MOSFET, with doped source and drain regions. (Image: Azal Alothmani, Lund University) When working as an amplifier, ...

Canadian Bitcoin miner Bitfarms on Monday announced it had bought U.S.-based Stronghold Digital Mining with the deal valued ...

The next evolution of stablecoins represents a trillion-dollar opportunity, argues Coinshift CEO Tarun Gupta. (Sponsored post ...

In addition, Vishay will provide a portfolio roadmap for 650 V to 1,700 V SiC MOSFETs with on-resistances ranging from 10 mΩ to 560 Ω. Vishay’s SiC platform is based on a proprietary MOSFET technology ...

Power management leader, Kinetic Technologies, is expanding its Power over Ethernet (PoE) portfolio with the introduction of the KTA1170 dual active bridge rectifier. This device is a single-chip, ...

Toshiba's new gate driver IC for brushed DC motors supports downsizing, low power use, and higher reliability in automotive ...

A few years ago, though, Blackstar Amplification saw an opportunity for change, with some modern thinking. The St James range ...

Alpha and Omega Semiconductor Limited (AOS) has unveiled two cutting-edge surface-mount package options for its industry-leading high-power MOSFET portfolio. Engineered to meet the stringent packaging ...

At close: March 14 at 3:59:12 PM EDT Loading Chart for IFNNY ...

8306.T Mitsubishi UFJ Financial Group, Inc.