Abstract: In this work, the endurance of HfO2-based ferroelectric-gate field-effect transistors (FeFETs) on fully depleted silicon-on-insulator (FD-SOI) platform is improved by Al2O3 insertion layer ...
Abstract Organic field-effect transistors (OFETs) have been largely investigated due to their low-cost manufacturing, flexibility, and lightweight, as well as their optical and electrical ...
(or aluminium) is a soft, lightweight, silvery metal. It is an element in the boron group on the periodic table of elements, with the symbol Al and atomic number 13. On the earth’s crust, aluminium is ...
High-k dielectrics of Al2O3, HfO2 and ZrO2 have been directly deposited on MoS2 through plasma enhanced atomic layer deposition (PEALD). Among them, PEALD-ZrO2/ ...
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