Matched GaN on SiC RF power transistor for pulsed avionics operates over 1030-1090 MHz bandwidth, provides 600 W output power, 21.4 dB of gain (typical) and 63% efficiency.
OSAKA, Japan--(BUSINESS WIRE)--Panasonic Corporation today announced that it will launch the industry's smallest enhancement-mode[1] gallium nitride (GaN)[2] power transistors (X-GaN TM)** package.
The TPH2006PS is said to be the first GaN high electron mobility transistor (HEMT) on SiC substrate to receive JEDEC qualification. The 600-V HEMT device comes from Transphorm Inc., Goleta, Calif., ...
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