TOKYO--(BUSINESS WIRE)--Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today announced that it has developed circuit technologies for an embedded ...
Renesas Electronics Corp. has developed two new circuit technologies for an embedded spin-transfer torque magnetoresistive random-access memory (STT-MRAM) test chip with fast read and write ...
In a recently published article in IEEE Electron Devices Magazine the authors, I was one of them, looked at the impact of external magnetic fields on spin tunnel torque magnetic random-access memories ...
A technical paper titled “Impact of external magnetic fields on STT-MRAM” was recently published by researchers at Univ. Grenoble Alpes, Everspin, GlobalFoundries, imec, et al. “This application note ...
A prototype MCU test chip with a 10.8 Mbit magnetoresistive random-access memory (MRAM) memory cell array—fabricated on a 22-nm embedded MRAM process—claims to accomplish a random read access ...
FREMONT, Calif. & HSINCHU, Taiwan--(BUSINESS WIRE)--Avalanche Technology, the leader in next generation MRAM technology, and United Microelectronics Corporation (NYSE: UMC; TWSE: 2303) (“UMC”), a ...
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