The technology in an Intel chip that enabled the fabrication of 45 nm microprocessors in 2007. As elements in the chip were being reduced to 45 nanometers, the gate dielectric began to lose its ...
San Jose, Calif. — Three entities–IBM, Intel and Sematech–have separately disclosed breakthroughs in the development of high-k dielectrics and metal gates for use in advanced gate stack applications ...
SAN FRANCISCO — There's no longer a debate that it is time to make changes in the transistor such as integration of new materials and processes in the gate structure to make chips faster and more ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results