A graphene layer consists of carbon atoms linked by covalent bonds, forming a honeycomb structure. Its excellent electron mobility, chemical and physical stability, electrical and thermal conductivity ...

A semiconductor amplifying device with up to 100-meg input impedance is now available from an American manufacturer. (Some French firms already have announced field-effect devices.) Crystalonics, ...

Field-effect transistors (FETs) are the cornerstone of modern electronic devices, providing the essential functionality for digital logic, analog processing and power management. The fundamental ...

A research team has developed an n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary ...

Diamond field-effect transistors (FETs) represent a cutting-edge development in semiconductor technology, leveraging the exceptional thermal conductivity, high breakdown voltage, and chemical ...

A new publication from Opto-Electronic Science; DOI 10.29026/oes.2024.230046 discusses photo-driven Fin Field-Effect Transistors. Infrared detectors are the core components of infrared detection ...

A technical paper titled “Buried power rail to suppress substrate leakage in complementary field effect transistor (CFET)” was published by researchers at Korea University and Sungkyunkwan University.

With the right mix of materials, TFETs promise cooler, smaller, and more efficient circuits for everything from the Internet of Things to brain-inspired computers. But before they can leave the lab, ...

Many things about diamonds seem eternal, including the many engineering problems related to making them work as a silicon ...

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This research was published in Advanced Science ("High-temperature and high-electron mobility metal-oxide-semiconductor field-effect transistors based on n-type diamond"). World’s First N-Channel ...